P-ISSN: 2707-6636, E-ISSN: 2707-6644
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2023, Vol. 4, Issue 1, Part A
On increasing of integration rate of field-effect heterotransistors in the framework of RS-trigger
Author(s): EL Pankratov
Abstract: In this paper we introduce an approach to increase integration rate of field-effect heterotransistors framework RS-trigger. Framework the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
DOI: 10.33545/27076636.2023.v4.i1a.82
Pages: 65-84 | Views: 295 | Downloads: 94
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How to cite this article:
EL Pankratov. On increasing of integration rate of field-effect heterotransistors in the framework of RS-trigger. Int J Comput Programming Database Manage 2023;4(1):65-84. DOI: 10.33545/27076636.2023.v4.i1a.82
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